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| PD- 93932 PROVISIONAL IRFPS60N50C HEXFET(R) Power MOSFET SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Recommended clip force VDSS 500V RDS(on) typ. 0.038 ID 60A Super-247TM Max. 60 38 240 390 3.1 20 5.0 -55 to + 150 300 20 Units A W W/C V V/ns C N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 600 60 39 Units mJ A mJ Thermal Resistance Symbol RJC RCS RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.32 --- 40 Units C/W www.irf.com 1 6/2/00 IRFPS60N50C Symbol V(BR)DSS V(BR)DSS/TJ PROVISIONAL Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 3.5 --- --- --- --- Typ. --- 0.68 0.038 --- --- --- --- --- Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.043 VGS = 10V, ID = 36A 5.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V RDS(on) VGS(th) IDSS IGSS Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS ISM Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 34 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 330 77 160 39 49 94 11 10760 6120 240 25760 240 780 Max. Units Conditions --- S VDS = 50V, ID = 36A --- ID = 36A --- nC VDS = 400V --- VGS = 10V, --- VDD = 250V --- ID = 36A ns --- RG = 1.3 --- VGS = 10V, --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 60 --- --- showing the A G integral reverse --- --- 240 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 36A, VGS = 0V --- 920 1380 ns TJ = 125C, IF = 36A --- 20 30 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VSD trr Q rr ton Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 0.93mH, RG = 25, IAS = 36A, ISD 36A, di/dt 42A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com PROVISIONAL IRFPS60N50C Super-247TM Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 |
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